The field-effect transistor (FET) is a transistor that uses an electric field to control the shape and hence the conductivity of a channel of one type of charge carrier in a semiconductor material. FETs are unipolar transistors as they involve single-carrier-type operation. The concept of the FET predates the Bipolar junction transistor (BJT), though it was not physically implemented until after BJTs due to the limitations of semiconductor materials and the relative ease of manufacturing BJTs compared to FETs at the time.
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