Basic Information
FETs are majority-charge-carrier devices. The device consists of an active channel through which majority charge carriers, electrons or holes, flow from the source to the drain. Source and drain terminal conductors are connected to the semiconductor through ohmic contacts. The conductivity of the channel is a function of potential applied across the gate and source terminals.
The FET's three terminals are:
- Source (S), through which the majority carriers enter the channel. Conventional current entering the channel at S is designated by IS.
- Drain (D), through which the majority carriers leave the channel. Conventional current entering the channel at D is designated by ID. Drain to Source voltage is VDS.
- Gate (G), the terminal that modulates the channel conductivity. By applying voltage to G, one can control ID.
Read more about this topic: Field-effect Transistor
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