Field-effect Transistor - Types of Field-effect Transistors

Types of Field-effect Transistors

The channel of a FET is doped to produce either an N-type semiconductor or a P-type semiconductor. The drain and source may be doped of opposite type to the channel, in the case of depletion mode FETs, or doped of similar type to the channel as in enhancement mode FETs. Field-effect transistors are also distinguished by the method of insulation between channel and gate. Types of FETs are:

• CNTFET (Carbon nanotube field-effect transistor)
• The DEPFET is a FET formed in a fully depleted substrate and acts as a sensor, amplifier and memory node at the same time. It can be used as an image (photon) sensor.
• The DGMOSFET is a MOSFET with dual gates.
• The DNAFET is a specialized FET that acts as a biosensor, by using a gate made of single-strand DNA molecules to detect matching DNA strands.
• The FREDFET (Fast Reverse or Fast Recovery Epitaxial Diode FET) is a specialized FET designed to provide a very fast recovery (turn-off) of the body diode.
• The HEMT (high electron mobility transistor), also called a HFET (heterostructure FET), can be made using bandgap engineering in a ternary semiconductor such as AlGaAs. The fully depleted wide-band-gap material forms the isolation between gate and body.
• The HIGFET (heterostructure insulated gate field effect transisitor), is used mainly in research now.
• The IGBT (insulated-gate bipolar transistor) is a device for power control. It has a structure akin to a MOSFET coupled with a bipolar-like main conduction channel. These are commonly used for the 200-3000 V drain-to-source voltage range of operation. Power MOSFETs are still the device of choice for drain-to-source voltages of 1 to 200 V.
• The ISFET (ion-sensitive field-effect transistor) used to measure ion concentrations in a solution; when the ion concentration (such as H+, see pH electrode) changes, the current through the transistor will change accordingly.
• The JFET (junction field-effect transistor) uses a reverse biased p-n junction to separate the gate from the body.
• The MESFET (Metal–Semiconductor Field-Effect Transistor) substitutes the p-n junction of the JFET with a Schottky barrier; used in GaAs and other III-V semiconductor materials.
• The MODFET (Modulation-Doped Field Effect Transistor) uses a quantum well structure formed by graded doping of the active region.
• The MOSFET (Metal–Oxide–Semiconductor Field-Effect Transistor) utilizes an insulator (typically SiO₂) between the gate and the body.
• The NOMFET is a Nanoparticle Organic Memory Field-Effect Transistor.
• The OFET is an Organic Field-Effect Transistor using an organic semiconductor in its channel.
• The GNRFET is a Field-Effect Transistor that uses a graphene nanoribbon for its channel.
• The VeSFET (Vertical-Slit Field-Effect Transistor) is a square-shaped junction-less FET with a narrow slit connecting the source and drain at opposite corners. Two gates occupy the other corners, and control the current through the slit.
• The TFET (Tunnel Field-Effect Transistor) is based on band to band tunneling