1t-sram

1T-SRAM

1T-SRAM is a pseudo-static random-access memory (PSRAM) technology introduced by MoSys, Inc., which offers a high-density alternative to traditional static random access memory (SRAM) in embedded memory applications. Mosys uses a single-transistor storage cell (bit cell) like dynamic random access memory (DRAM), but surrounds the bit cell with control circuitry that makes the memory functionally equivalent to SRAM (the controller hides all DRAM-specific operations such as precharging and refresh). 1T-SRAM (and PSRAM in general) has a standard single-cycle SRAM interface and appears to the surrounding logic just as an SRAM would.