Construction
The zener diode's operation depends on the heavy doping of its p-n junction. The depletion region formed in the diode is very thin (<0.000001 m) and the electric field is consequently very high (about 500000 V/m) even for a small reverse bias voltage of about 5 V, allowing electrons to tunnel from the valence band of the p-type material to the conduction band of the n-type material.
In the atomic scale, this tunneling corresponds to the transport of valence band electrons into the empty conduction band states; as a result of the reduced barrier between these bands and high electric fields that are induced due to the relatively high levels of dopings on both sides. The breakdown voltage can be controlled quite accurately in the doping process. While tolerances within 0.05% are available, the most widely used tolerances are 5% and 10%. Breakdown voltage for commonly available zener diodes can vary widely from 1.2 volts to 200 volts.
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