Z-RAM
Zero-capacitor (registered trademark, Z-RAM) is a novel dynamic random-access memory technology developed by Innovative Silicon based on the floating body effect of silicon on insulator (SOI) process technology. Z-RAM has been licensed by Advanced Micro Devices for possible use in future microprocessors. Innovative Silicon claims the technology offers memory access speeds similar to the standard six-transistor static random-access memory cell used in cache memory but uses only a single transistor, therefore affording much higher packing densities.
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