Dependence On Random Dopant Fluctuation
Random dopant fluctuation (RDF) is a form of process variation resulting from variation in the implanted impurity concentration. In MOSFET transistors, RDF in the channel region can alter the transistor's properties, especially threshold voltage. In newer process technologies RDF has a larger effect because the total number of dopants is fewer.
Research works are being carried out in order to suppress the dopant fluctuation which leads to the variation of threshold voltage between devices undergoing same manufacturing proccess.
Read more about this topic: Threshold Voltage
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