Test Method
Voltage is applied to the MOS structure to force a controlled current through the oxide, i.e. to inject a controlled amount of charge into the dielectric layer. By measuring the time after which the measured voltage drops towards zero (when electrical breakdown occurs) and integrating the injected current over time, the charge needed to break the gate oxide is determined.
This gate charge integral is defined as:
where is the measurement time at the step just prior to destructive avalanche breakdown.
Read more about this topic: QBD (electronics)
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