Impact of Multiple Exposure
As the factor has been steadily shrinking over the past technology generations, the anticipated requirement of moving to multiple exposure to generate circuit patterns becomes more real. This approach will affect the application of OPC, as one will need to take into account the sum of the image intensities from each exposure. This is the case for the complementary photomask technique, where the images of an alternating-aperture phase-shifting mask and a conventional binary mask are added together.
Read more about this topic: Optical Proximity Correction
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