History
The bipolar point-contact transistor was invented in December 1947 at the Bell Telephone Laboratories by John Bardeen and Walter Brattain under the direction of William Shockley. The junction version known as the bipolar junction transistor, invented by Shockley in 1948, enjoyed three decades as the device of choice in the design of discrete and integrated circuits. Nowadays, the use of the BJT has declined in favor of CMOS technology in the design of digital integrated circuits. The incidental low performance BJTs inherent in CMOS ICs, however, are often utilized as bandgap voltage reference, silicon bandgap temperature sensor and to handle electrostatic discharge.
Read more about this topic: Junction Transistor
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“There is no history of how bad became better.”
—Henry David Thoreau (1817–1862)
“Let us not underrate the value of a fact; it will one day flower in a truth. It is astonishing how few facts of importance are added in a century to the natural history of any animal. The natural history of man himself is still being gradually written.”
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