Device Structure
An IGBT cell is constructed similarly to a n-channel vertical construction power MOSFET except the n+ drain is replaced with a p+ collector layer, thus forming a vertical PNP bipolar junction transistor.
This additional p+ region creates a cascade connection of a PNP bipolar junction transistor with the surface n-channel MOSFET.
Read more about this topic: Insulated-gate Bipolar Transistor
Famous quotes containing the words device and/or structure:
“It is my hope to be able to prove that television is the greatest step forward we have yet made in the preservation of humanity. It will make of this Earth the paradise we have all envisioned, but have never seen.”
—Joseph O’Donnell. Clifford Sanforth. Professor James Houghland, Murder by Television, just before he demonstrates his new television device (1935)
“Man is more disposed to domination than freedom; and a structure of dominion not only gladdens the eye of the master who rears and protects it, but even its servants are uplifted by the thought that they are members of a whole, which rises high above the life and strength of single generations.”
—Karl Wilhelm Von Humboldt (1767–1835)