Device Structure
An IGBT cell is constructed similarly to a n-channel vertical construction power MOSFET except the n+ drain is replaced with a p+ collector layer, thus forming a vertical PNP bipolar junction transistor.
This additional p+ region creates a cascade connection of a PNP bipolar junction transistor with the surface n-channel MOSFET.
Read more about this topic: Insulated-gate Bipolar Transistor
Famous quotes containing the words device and/or structure:
“One good reason for the popularity of “reductionism” among the philosophical outposts of the Western Establishment is that it can be, and is, used as a device for trying to take the wind, so to speak, out of the sails of Marxism.... In essence reductionism is a kind of anti-Marxist caricature of Marxist determinism. It is what anti-Marxists pretend that Marxist determinism is.”
—Claud Cockburn (1904–1981)
“Women over fifty already form one of the largest groups in the population structure of the western world. As long as they like themselves, they will not be an oppressed minority. In order to like themselves they must reject trivialization by others of who and what they are. A grown woman should not have to masquerade as a girl in order to remain in the land of the living.”
—Germaine Greer (b. 1939)