Device Structure
An IGBT cell is constructed similarly to a n-channel vertical construction power MOSFET except the n+ drain is replaced with a p+ collector layer, thus forming a vertical PNP bipolar junction transistor.
This additional p+ region creates a cascade connection of a PNP bipolar junction transistor with the surface n-channel MOSFET.
Read more about this topic: Insulated-gate Bipolar Transistor
Famous quotes containing the words device and/or structure:
“Corporation. An ingenious device for obtaining individual profit without individual responsibility.”
—Ambrose Bierce (1842–1914)
“A committee is organic rather than mechanical in its nature: it is not a structure but a plant. It takes root and grows, it flowers, wilts, and dies, scattering the seed from which other committees will bloom in their turn.”
—C. Northcote Parkinson (1909–1993)