Device Structure
An IGBT cell is constructed similarly to a n-channel vertical construction power MOSFET except the n+ drain is replaced with a p+ collector layer, thus forming a vertical PNP bipolar junction transistor.
This additional p+ region creates a cascade connection of a PNP bipolar junction transistor with the surface n-channel MOSFET.
Read more about this topic: Insulated-gate Bipolar Transistor
Famous quotes containing the words device and/or structure:
“Corporation. An ingenious device for obtaining individual profit without individual responsibility.”
—Ambrose Bierce (1842–1914)
“The verbal poetical texture of Shakespeare is the greatest the world has known, and is immensely superior to the structure of his plays as plays. With Shakespeare it is the metaphor that is the thing, not the play.”
—Vladimir Nabokov (1899–1977)