Dielectric Strength - Breakdown Field Strength

Breakdown Field Strength

The field strength at which breakdown occurs depends on the respective geometries of the dielectric (insulator) and the electrodes with which the electric field is applied, as well as the rate of increase at which the electric field is applied. Because dielectric materials usually contain minute defects, the practical dielectric strength will be a fraction of the intrinsic dielectric strength of an ideal, defect-free, material. Dielectric films tend to exhibit greater dielectric strength than thicker samples of the same material. For instance, the dielectric strength of silicon dioxide films of a few hundred nm to a few μm thick is approximately 0.5GV/m. However very thin layers (below, say, 100 nm) become partially conductive because of electron tunneling. Multiple layers of thin dielectric films are used where maximum practical dielectric strength is required, such as high voltage capacitors and pulse transformers. Since the dielectric strength of gases varies depending on the shape and configuration of the electrodes, it is usually measured as a fraction of the dielectric strength of Nitrogen gas.

Dielectric strength (in MV/m, or 106 Volt/meter) of various common materials: