Bipolar Junction Transistor - Vulnerabilities

Vulnerabilities

Exposure of the transistor to ionizing radiation causes radiation damage. Radiation causes a buildup of 'defects' in the base region that act as recombination centers. The resulting reduction in minority carrier lifetime causes gradual loss of gain of the transistor.

Power BJTs are subject to a failure mode called secondary breakdown, in which excessive current and normal imperfections in the silicon die cause portions of the silicon inside the device to become disproportionately hotter than the others. The doped silicon has a negative temperature coefficient, meaning that it conducts more current at higher temperatures. Thus, the hottest part of the die conducts the most current, causing its conductivity to increase, which then causes it to become progressively hotter again, until the device fails internally. The thermal runaway process associated with secondary breakdown, once triggered, occurs almost instantly and may catastrophically damage the transistor package.

If the emitter-base junction is reverse biased into avalanche or Zener mode and current flows for a short period of time, the current gain of the BJT will be permanently degraded.